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| Transistor 2SC5473 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 2.10.1 s Features q q q 0.425 1.250.10 0.425 q High transition frequency fT. High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and pager. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.00.1 1.30.1 0.65 0.65 0.70.1 0.50.1 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25C) 0.20.1 Ratings 9 6 1 30 150 150 -55 ~ +150 Unit V V V mA mW C C 1:Emitter 2:Collector 3:Emitter 4:Base EIAJ:SC-82 S-Mini Type Package Marking symbol : 3A s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector output capacitance Transition frequency Noise figure Foward transfer gain (Ta=25C) Symbol ICBO IEBO hFE Cob fT NF | S21e |2 Conditions VCB = 9V, IE = 0 VEB = 1V, IC = 0 VCE = 3V, IC = 10mA VCB = 3V, IE = 0, f = 1MHz VCE = 3V, IC = 10mA, f = 2GHz VCE = 3V, IC = 3mA, f = 1.5GHz VCE = 3V, IC = 10mA, f = 2GHz 80 0.4 12.0 1.8 8.9 min typ max 1 1 200 pF GHz dB dB Unit A A 0.15-0.05 0 to 0.1 +0.10 0.3 +0.1 0 1 Transistor hFE -- IC 240 14 2SC5473 fT -- IC VCE=3V 10 | S21e |2 -- IC Forward transfer gain |S21e|2 (dB) VCE=3V f=2GHz Forward current transfer ratio hFE 200 Transition frequency fT (GHz) 12 8 10 160 Ta=75C 25C 8 6 120 -25C 6 4 80 4 40 2 2 0 0.1 0 0.3 1 3 10 30 100 1 3 10 30 100 0 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) NF -- IC 5 VCE=3V f=1.5GHz 4 Noise figure NF (dB) 3 2 1 0 0.1 0.3 1 3 10 Collector current IC (mA) 2 |
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